EXAMINE THIS REPORT ON N TYPE GE

≤ 0.fifteen) is epitaxially grown over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and then the framework is cycled by oxidizing and annealing stages. Mainly because of the preferential oxidation of Si more than Ge [sixty eight], the original Si1–The existence of germanium was predicted by Russian chemist Dmitri Mendelee